Ulwazi lobuchwepheshe lwe-SI2301CDS-T1-E3 |
Inombolo Yengxenye Yomkhiqizi |
SI2301CDS-T1-E3 |
Isigaba |
|
Umkhiqizi |
Vishay / Siliconix |
Incazelo |
MOSFET P-CH 20V 3.1A SOT23-3 |
Iphakheji / Icala |
SOT-23-3 (TO-236) |
Inani elitholakalayo |
10200 pcs |
I-Vgs (th) (Max) @ Id |
1V @ 250µA |
I-Vgs (i-Max) |
±8V |
Ubuchwepheshe |
MOSFET (Metal Oxide) |
Iphakheji yedivaysi yensiza |
SOT-23-3 (TO-236) |
Uchungechunge |
TrenchFET® |
Ama-Rds On (Max) @ Id, Vgs |
112mOhm @ 2.8A, 4.5V |
Ukusakaza kwamandla (i-Max) |
860mW (Ta), 1.6W (Tc) |
Iphakheji / Icala |
TO-236-3, SC-59, SOT-23-3 |
Isishuqulu |
Tape & Reel (TR) |
Ukushisa okusebenzayo |
-55°C ~ 150°C (TJ) |
Uhlobo lokufaka |
Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds |
405 pF @ 10 V |
Ishaja Isango (Qg) (Max) @ Vgs |
10 nC @ 4.5 V |
Uhlobo lwe-FET |
P-Channel |
Isici se-FET |
- |
I-Voltage yeDrayivu (i-Max Rds On, i-Min Rds On) |
2.5V, 4.5V |
Ukukhipha ku-Source Voltage (Vdss) |
20 V |
Okwamanje - Ukukhipha Okuqhubekayo (Id) @ 25 ° C |
3.1A (Tc) |
Inombolo yomkhiqizo eyisisekelo |
SI2301 | | |
Landa | SI2301CDS-T1-E3 PDF - EN.pdf |
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Umhlinzeki SI2301CDS-T1-E3 | Oda i-SI2301CDS-T1-E3 Online | Uphenyo i-SI2301CDS-T1-E3 |
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Idatha ye-SI2301CDS-T1-E3 | Landa i-SI2301CDS-T1-E3 Datasheet | Umkhiqizi Vishay / Siliconix |
I-IC Chips ne-IGBT Module - I-Hot Stock Part Number